PART |
Description |
Maker |
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R |
SILICON PNP EPITAXIAL TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR 进步党硅外延晶体 REVERSIBLE MOTOR DRIVER NPN EPITAXIAL PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS HIGH VOLTAGE NPN TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA) HIGH-FREQUENCY AMPLIFIER TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR SILICON PNP TRANSISTOR LOW FREQUENCY PNP TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR MEDIUM POWER TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR 50 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES CO LTD ??『绉???′唤?????? Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
|
BUL54AFI BUL52BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 4 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
2SC5077 2SC5077A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor Toshiba Corporation
|
KSE5740 KSE5742 KSE5741 KSE5740TU KSE5741TU KSE574 |
High Voltage Power Switching In Inductive Circuits 8 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220 NPN Silicon Darlington Transistor
|
FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
KSC5030 |
NPN Silicon Transistor High Voltage and High Reliabilty 6 A, 800 V, NPN, Si, POWER TRANSISTOR
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
BUF508A |
NPN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR
|
CDIL[Continental Device India Limited]
|
BUL54B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB] TT electronics Semelab Limited
|
BUL58BSMD BUL58 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB SEME-LAB[Seme LAB]
|